Hyperthermal vapor deposition of copper: athermal and biased diffusion effects
نویسنده
چکیده
The kinetic energy of an adatom during its impact with a growth surface significantly affects the morphology and microstructure of vapor-deposited films and coatings. Atomic-scale reconstruction processes including ‘athermal’ and ‘biased’ diffusion are in part responsible. A three-dimensional molecular dynamics method has been used to characterize the extent of these diffusional processes following hyperthermal adatom impacts. Athermal diffusion was shown to result from a significant transient increase in effective temperature near the impact site due to the partitioning of the latent heat of condensation and the adatom’s incident kinetic energy amongst the vibrational modes of the lattice. The diffusion induced by this mechanism was found to be more or less independent of the substrate temperature. Simulations of oblique hyperthermal deposition indicated that adatoms can overcome surface potential-energy barriers without thermal activation and sometimes skip large distances over the substrate surface. This results in significant forward-directed biased diffusion. The dependence of the transient heating (responsible for athermal diffusion) and the biased diffusion distance upon the adatom’s incident energy and angle have been determined for the {100}, {110} and {111} surfaces of copper and fitted to simple relations that are convenient for use in atomistic deposition models. © 1999 Elsevier Science B.V. All rights reserved.
منابع مشابه
Monte Carlo Simulation of Hyperthermal Physical Vapor Deposition
Low-pressure sputtering and ionized vapor deposition processes create atomic fluxes with kinetic energies in the 1.0–20 eV (and above) range. The impact energy of these hyperthermal atoms significantly effects the surface morphology and structure of vapor deposited films. Recent molecular dynamics simulations of metal atom interactions with a metal surface have established the energy and angula...
متن کاملHyperthermal vapor deposition of copper: reflection and resputtering effects
Three-dimensional molecular dynamics simulations of hyperthermal copper atom impacts with copper surfaces have been used to investigate the effects of incident atom energy upon atomic reflection and resputtering during physical vapor deposition. No reflection or resputtering has been observed for incident energies below 10 eV. However, as the incident energy was increased to 20 eV and above, th...
متن کاملAtomistic simulations of deep submicron interconnect metallization
Damascene approaches are widely used for creating microelectronic interconnects. Successful implementation of the process is reliant upon the deposition of a refractory metal or metal nitride liner coating. It functions as a diffusion barrier layer to suppress transport of subsequently deposited interconnect metals into the surrounding dielectric. The development of vapor-phase processes for th...
متن کاملAtomistic simulation of the vapor deposition of Ni/Cu/Ni multilayers: Incident adatom angle effects
Molecular dynamics simulations have been used to explore the effects of incident adatom angle upon the atomic scale structure of Ni/Cu/Ni multilayers grown by vapor deposition under controlled incident atom energy conditions. For incident atom energies of 1 eV or less, increasing the incident angle increased interfacial roughness, resulted in void formation in the nickel layer, and intermixing ...
متن کاملAn rf sustained argon and copper plasma for ionized physical vapor deposition of copper
Langmuir probe, optical emission spectroscopy, and biased quartz crystal microbalance measurements were used to investigate an argon and copper plasma used for ionized physical vapor deposition of copper. Copper vapor generated by a magnetron sputter discharge is ionized upon passing through an argon discharge excited by an internal rf induction antenna. Argon plasma characteristics such as ele...
متن کامل